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Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes

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6 Author(s)
Yu, J. ; Adv. Technol. Lab., Bell-Northern Res., Ottawa, Ont., Canada ; Tarof, L.E. ; Bruce, R. ; Knight, D.G.
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The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85/spl deg/C.

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Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 5 )