Referenced Items are not available for this document.
This work reports measured effective mobility vs. effective vertical electric field and the accompanying experimental method of extraction for the fully depleted (FD) SOI MOSFET. The effective channel mobility vs. effective vertical electric field behavior was investigated as a function of the SOI film doping concentration, the SOI back-gate bias, and the SOI film thickness. The validity of using the approximation, Q/sub i/=C/sub ox/(V/sub GS//spl minus/V/sub TH/), for the inversion charge density in FD SOI is examined and experimentally confirmed.<
Published in:
Electron Device Letters, IEEE
(Volume:15
,
Issue:
4
)
Date of Publication: April 1994
- Page(s):
- 117 - 119
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4684484
- Digital Object Identifier :
- 10.1109/55.285411
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- April 1994
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
