By Topic

Enhancement of oxide break-up by implantation of fluorine in poly-Si emitter contacted p/sup +/-n shallow junction formation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Shye Lin Wu ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chung Len Lee ; Tan Fu Lei ; Chen, C.F.
more authors

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p/sup +/-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900/spl deg/C. As a result, the junction depth of the BF/sub 2/-implanted device is much larger than that of the boron-implanted device.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 4 )