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The impact of scaling-down oxide thickness on poly-Si thin-film transistors' I-V characteristics

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2 Author(s)
Pole-Shang Lin ; Submicron Technol. Div., Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Li, T.-S.

The key factors reducing the fluctuations of poly-Si I-V fluctuations are investigated. Besides the trapping states at the grain boundary, the oxide thickness plays an important role in poly-Si characteristics. Scaling down the oxide thickness will improve both poly-Si performance and I-V uniformity.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 4 )