By Topic

A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
E. Sano ; NTT LSI Labs., Atsugi, Japan ; M. Yoneyama ; H. Nakajima ; Y. Matsuoka

We demonstrate, for the first time, the characteristics of an InP/InGaAs HBT-compatible pin-PD and a monolithically integrated pin/HBT photoreceiver. The pin-PD can produce a short pulse with an FWHM of 80.8 ps followed by an elongated tail, when illuminated by optical pulses with an FWHM of 40 ps and a wavelength of 1.3 μm. The fall time of the output is determined by the transit time of holes generated in the n +-InGaAs layer. The monolithically integrated photoreceiver, consisting of the pin-PD and a transimpedance preamplifier, can operate at 2.5 Gb/s with a sensitivity of -9.8 dBm. This performance was mainly limited by the characteristics of the pin-PD

Published in:

Journal of Lightwave Technology  (Volume:12 ,  Issue: 4 )