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A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process

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4 Author(s)
Sano, E. ; NTT LSI Labs., Atsugi, Japan ; Yoneyama, M. ; Nakajima, H. ; Matsuoka, Yutaka

We demonstrate, for the first time, the characteristics of an InP/InGaAs HBT-compatible pin-PD and a monolithically integrated pin/HBT photoreceiver. The pin-PD can produce a short pulse with an FWHM of 80.8 ps followed by an elongated tail, when illuminated by optical pulses with an FWHM of 40 ps and a wavelength of 1.3 μm. The fall time of the output is determined by the transit time of holes generated in the n +-InGaAs layer. The monolithically integrated photoreceiver, consisting of the pin-PD and a transimpedance preamplifier, can operate at 2.5 Gb/s with a sensitivity of -9.8 dBm. This performance was mainly limited by the characteristics of the pin-PD

Published in:

Lightwave Technology, Journal of  (Volume:12 ,  Issue: 4 )

Date of Publication:

Apr 1994

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