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Superior damage-immunity of thin oxides thermally grown on reactive-ion-etched silicon surface in N2O ambient

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6 Author(s)
Ueng, S.Y. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chao, T.S. ; Wang, P.J. ; Chen, W.H.
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Thin oxides thermally grown on reactive-ion-etched silicon surfaces in N2O ambient have been studied. As compared with pure oxides grown on the etched silicon in dry oxygen, N2O-grown oxides exhibit significantly stronger immunity to the RIE-induced damages. A great improvement in both time-zero-dielectric-breakdown (TZDB) and time-dependent-breakdown (TDDB) characteristics is observed for the N2O-grown oxides on RIE-treated silicon surfaces. Accelerated tests have shown that the N 2O oxide grown on the RIE silicon surface can achieve a lifetime longer than the pure oxide grown on the correspondingly etched silicon surface with a factor over 108

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 5 )