By Topic

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
P. G. Neudeck ; NASA Lewis Res. Center, Cleveland, OH, USA ; D. J. Larkin ; J. E. Starr ; J. A. Powell
more authors

3C-SiC (β-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC diodes emit significantly bright green-yellow light while the 6H SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (<0.5° off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 μm diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400°C

Published in:

IEEE Transactions on Electron Devices  (Volume:41 ,  Issue: 5 )