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Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

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2 Author(s)
Schuegraf, Klaus F. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Chenming Hu

In this paper, we present a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 Å and 130 Å, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. This model, based on hole injection from the anode, accurately predicts QBD and tBD behavior including a fluence in excess of 107 C/cm2 at an oxide voltage of 2.4 V for a 25 Å oxide. Moreover, this model is a refinement of and fully complementary with the well known 1/E model, while offering the ability to predict oxide reliability for low voltages

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 5 )