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Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations

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2 Author(s)
Chan, Yi-Jen ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Pavlidis, D.

The presence of traps in GaInP/GaAs and AlGaAs/GaAs HEMT's was investigated by means of low frequency noise and frequency dispersion measurements. Low frequency noise measurements showed two deep traps (E a1=0.58 eV, Ea2=0.27 eV) in AlGaAs/GaAs HEMT's. One of them (Ea2) is responsible for the channel current collapse at low temperature. A deep trap (Ea1'=0.52 eV) was observed in GaInP/GaAs HEMT's only at a much higher temperature (~350 K). These devices showed a transconductance dispersion of ~16% at 300 K which reduced to only ~2% at 200 K. The dispersion characteristics of AlGaAs/GaAs HEMT's were very similar at 300 K (~12%) but degraded at 200 K (~20%). The low frequency noise and the transconductance dispersion are enhanced at certain temperatures corresponding to trap level crossing by the Fermi-level. The transition frequency of 1/f noise is estimated at 180 MHz for GaInP/GaAs HEMT's and resembles that of AlGaAs/GaAs devices

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 5 )