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A multiple-dimensional multiple-state SRAM cell using resonant tunneling diodes

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2 Author(s)
Ming-Huei Shieh ; Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA ; Hung Chang Lin

Several designs are presented for a multiple-dimensional multiple-state SRAM cell based on resonant tunneling diodes (RTDs). The proposed cells take advantages of the hysteresis and folding I-V characteristics of the RTD. When properly biased, the cell can operate up to (N+1)m or more number of stable quantized operating states, where N is the number of current-peaks of the RTD and m is the number of access lines. A two dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs

Published in:

IEEE Journal of Solid-State Circuits  (Volume:29 ,  Issue: 5 )