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Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers

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6 Author(s)
T. Namegaya ; R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan ; N. Matsumoto ; N. Yamanaka ; N. Iwai
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Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH compressively strained-layer quantum-well lasers were investigated from the viewpoint of the crystal quality of the strained-layer quantum wells and low threshold current operation at high temperature. As a result, we find that the optimum well number that gives the minimum threshold current increases with operating temperature and it was limited to the degradation of crystal quality of the quantum wells due to the critical thickness. A very high CW operating temperature of 170°C was obtained. A very high output power of over 300 mW was also achieved

Published in:

IEEE Journal of Quantum Electronics  (Volume:30 ,  Issue: 2 )