Referenced Items are not available for this document.
Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH compressively strained-layer quantum-well lasers were investigated from the viewpoint of the crystal quality of the strained-layer quantum wells and low threshold current operation at high temperature. As a result, we find that the optimum well number that gives the minimum threshold current increases with operating temperature and it was limited to the degradation of crystal quality of the quantum wells due to the critical thickness. A very high CW operating temperature of 170°C was obtained. A very high output power of over 300 mW was also achieved
Published in:
Quantum Electronics, IEEE Journal of
(Volume:30
,
Issue:
2
)
Date of Publication: Feb 1994
- Page(s):
- 578 - 584
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 4717655
- Digital Object Identifier :
- 10.1109/3.283806
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1994
- Sponsored by :
- IEEE Photonics Society
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