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Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well

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2 Author(s)
T. Ishikawa ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; J. E. Bowers

We describe the band lineups of InGaAlAs on (001) InP as well as InGaAsP on (001) InP system with strain effects, based on the Harrison model. We show that the compressive strain does not affect the band position so much, and tensile strain raises the band position in the InGaAsP system. It is also shown that both compressive and tensile strains raise the band positions in the InGaAlAs system. The conduction and valence band positions of InGaAs, InGaAsP, and InGaAlAs relative to InP valence band are given in approximate formulas as a function of the strain. We calculate the energy versus in-plane wave vector relationship of the InGaAsP/InGaAs(P) InGaAlAs/InGa(Al)As on InP strained quantum-well systems. We obtain the in-plane effective mass of the strained quantum-well system by fitting the dispersion relationship to a parabolic curve. The in-plane effective masses of several kinds of strained quantum-well systems are listed

Published in:

IEEE Journal of Quantum Electronics  (Volume:30 ,  Issue: 2 )