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Device-quality strained InAsP/InGaAsP multiple-quantum-well (MQW) structures are successfully grown using the low-pressure metalorganic vapor phase epitaxy method. The grown MQW structures are characterized using X-ray, photoluminescence, and photocurrent measurements that confirm that their structural and optical qualities are high enough for practical device applications, as well as that the InAsP/InGaAsP heterostructures have a large conduction-band offset. The grown wafers are processed into 40-μm-wide stripe-ridge waveguide lasers. Threshold current densities as low as 88 A/cm2 are achieved for a graded-index separate-confinement heterostructure (GRIN-SCH) single-quantum-well laser diode. Buried heterostructure laser diodes fabricated from GRIN-SCH 4-well strained MQW wafers have threshold currents as low as 1.05 mA at 26°C and 7.2 mA at 106°C
Published in:
Quantum Electronics, IEEE Journal of
(Volume:30
,
Issue:
2
)
Date of Publication: Feb 1994
- Page(s):
- 554 - 561
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 4717653
- Digital Object Identifier :
- 10.1109/3.283802
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1994
- Sponsored by :
- IEEE Photonics Society
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