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Linewidth enhancement factor in InGaAsP/lnP modulation-doped strained multiple-quantum-well lasers

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6 Author(s)
Kano, F. ; NTT Opto-Electron. Labs., Ibaraki, Japan ; Yamanaka, T. ; Yamamoto, Norio ; Mawatari, H.
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Reduction of the linewidth enhancement factor α is studied in InP-based strained multiple-quantum-well (MQW) lasers. Theoretical analysis shows that the α-parameter is greatly reduced in modulation-doped strained MQW lasers and may be zero while keeping positive gain. The experimental evaluation exhibits a very small α-parameter of around 1 in InGaAsP/InP modulation-doped strained MQW lasers. As a result of the small α-parameter, the linewidth-power product is effectively reduced in 1.5-μm DFB lasers with the modulation-doped strained MQW structure. A narrow spectral linewidth around 100 kHz was also obtained reproducibly in 1.5-μm modulation-doped strained MQW DFB lasers

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Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 2 )