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Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

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4 Author(s)
Thiis, P.J.A. ; Philips Optoelectronics Centre, Eindhoven, Netherlands ; Tiemeijer, L.F. ; Binsma, J.J.M. ; Van Dongen, T.

The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 2 )