Referenced Items are not available for this document.
The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained
Published in:
Quantum Electronics, IEEE Journal of
(Volume:30
,
Issue:
2
)
Date of Publication: Feb 1994
- Page(s):
- 477 - 499
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 4717646
- Digital Object Identifier :
- 10.1109/3.283797
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1994
- Sponsored by :
- IEEE Photonics Society
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