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Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation

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4 Author(s)
M. Fukuda ; NTT Opto-Electron. Labs., Kanagawa, Japan ; M. Okayasu ; J. Temmyo ; J. Nakand

The degradation behavior of 0.98-μm strained quantum well (QW) InGaAs/AlGaAs lasers with facet coating films is systematically clarified at high-power operations of more than 100 mW/facet. The degradation is mainly caused by the instability of the interface between the laser material (facet) and the antireflecting (AR) coating film. This phenomenon is associated with a high rate of facet oxidation and generation of instantaneous catastrophic optical damage (COD) at a relatively low optical output power in lasers without facet coating films. Throughout the clarification of those phenomena, the main reliability problem in 0.98-μm strained QW lasers under high output power operation is clarified

Published in:

IEEE Journal of Quantum Electronics  (Volume:30 ,  Issue: 2 )