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Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition

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4 Author(s)
T. M. Cockerill ; Mater. Res. Lab., Illinois Univ., Urbana, IL, USA ; D. V. Forbes ; J. A. Dantzig ; J. J. Coleman

Strained-layer InxGa1-xAs-GaAs-AlyGa1-yAs buried-heterostructure (BH) quantum-well lasers have been fabricated using three-step selective area atmospheric pressure metal-organic chemical vapor deposition. Selective-area epitaxy is used to produce BH lasers involving only GaAs on GaAs regrowth, eliminating the detrimental effects associated with exposed AlyGa1-yAs found in other fabrication methods. Additionally, selective-area epitaxy provides inplane bandgap energy control to fabricate BH devices with different wavelengths on the same wafer. Threshold currents as low as 11 mA are obtained for a 540-μm-long, 4-μm-wide device with uncoated cleaved facets. The devices operate at room temperature to more than 200 mW/uncoated facet with 40% external differential quantum efficiency. In-plane bandgap energy control results in a wide range of possible laser emission wavelengths for BH lasers grown on the same substrate

Published in:

IEEE Journal of Quantum Electronics  (Volume:30 ,  Issue: 2 )