By Topic

A suppression mechanism of Auger recombination effects in strained quantum wells induced by local negative curvature of the energy band structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Lui, W.W. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Yamanaka, T. ; Yoshikuni, Yuzo ; Seki, Shunji
more authors

An analytical method has been developed to calculate distribution of carriers that undergo CHHS Auger recombinations in semiconductors. From this approach, it is further discovered that holes with a local negative effective mass are, statistically, not favored in the CHHS Auger recombination process. As extended regions in valence subbands of compressively strained quantum well structures possess a negative curvature-and thus a local negative hole effective mass-this mechanism is identified to be a significant factor that suppresses Auger recombination effects in compressively strained quantum well laser diodes. This suppression mechanism is also observed and confirmed by recent Monte Carlo calculation results

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 2 )