By Topic

Introduction to the special issue on strained-layer optoelectronic materials and devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Coleman, J.J. ; Illinois Univ., Urbana, IL ; Miller, B.I.

Strained layer quantum-well heterostructure semiconductor lasers and other optoelectronic devices are having an impact on nearly all applications of optoelectronics and especially fiber optic telecommunications. In this special issue on strained-layer optoelectronic materials and devices, the most recent advances in this fast-moving area of research are represented by 11 invited papers and 18 contributed papers. The research reported here covers an impressive range from detailed calculations and experimental data on the valence band structure and optical gain of strained layer heterostructures to the laser operating characteristics of devices made from these structures

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 2 )