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Nondegenerate optical Kerr effect in semiconductors

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3 Author(s)
Sheik-Bahae, M. ; Center for Res. in Electro-Optics & Lasers, Univ. of Central Florida, Orlando, FL, USA ; Wang, J. ; Van Stryland, E.W.

We calculate the nondegenerate bound electronic nonlinear refractive index n212) (i.e., an index change at frequency ω1 due to the presence of a beam at frequency ω2) in semiconductors. We calculate this nonlinearity and its dispersion using a Kramers-Kronig transformation on the calculated nondegenerate nonlinear absorption spectrum due to two-photon absorption, electronic Raman and optical Stark effects. The calculated n2 values and their dispersion are compared to new experimental values for ZnSe and ZnS obtained using a 2-color Z-scan

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Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 2 )