500-GHz characterization of an optoelectronic S-parameter test structure

We propose a compact, high-bandwidth optoelectronic S-parameter test structure and characterize its performance via electrooptic sampling over a 500-GHz frequency range. The test structure is shown to be well-behaved over a 300-GHz bandwidth, with further improvement potential. Active devices can be wirebonded into the structure for characterization, or they can be integrated on-wafer for improved performance.<
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