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A new nonlinear I(V) model for FET devices including breakdown effects

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3 Author(s)
Teyssier, J.P. ; IRCOM, Limoges Univ., France ; Viaud, J.P. ; Quere, R.

The nonlinear FET I(V) behavior, including gate conduction and breakdown, has been investigated using a pulse measurement setup. An excessive current source has been observed in addition to the usual gate breakdown current. From these measurements, a nonlinear model including the conduction, breakdown, and excessive current phenomenon is proposed for the nonlinear simulation of high-power circuits. This I(V) model presents an improvement in terms of load line prediction and limits for the high-power nonlinear circuit design.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:4 ,  Issue: 4 )

Date of Publication:

April 1994

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