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GaInAsP lateral current injection lasers on semi-insulating substrates

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3 Author(s)
Oe, K. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Noguchi, Y. ; Caneau, C.

GaInAsP lateral current injection lasers have been fabricated on semi-insulating InP substrates. The lasers exhibit good lasing characteristics such as 10 mA threshold current, 10 mW maximum cw output power, and cw oscillation up to 70/spl deg/C. The laser has very low capacitance of 0.5 pF at zero bias voltage. This performance shows, for the first time, that the lateral current injection laser is a promising candidate for OEIC light sources.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 4 )

Date of Publication:

April 1994

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