By Topic

High power 875 nm Al-free laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Plano, W.E. ; SDI Inc., San Jose, CA, USA ; Major, J.S., Jr. ; Welch, D.F.

Data are presented on Al-free InGaAsP-GaAs single quantum well laser diodes operating at 875 nm. Total output powers in excess of 4 W are achieved from a 100 μm broad area gain-guided device. Threshold currents under 200 A/cm2 are reported for diodes operated continuous wave (cw) at room temperature (20/spl deg/C).

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 4 )