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A simple technique for determining deep-level concentrations in high-resistivity semiconductors using capacitance transients

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1 Author(s)
Darken, L. ; Oxford Instrum., Oak Ridge, TN, USA

Many of the practical difficulties of using capacitance transient techniques to determine the concentration of deep levels in the depletion region of a semiconductor diode are discussed with particular reference to high-purity germanium. A method called the ΔVC /VP technique, is shown to have many advantages for high-resistivity materials when the deep-level concentration is relatively large (NT/NB⩾0.01) and particularly when there are temperature-dependent equivalent-circuit effects. The technique involves matching the capacitances of two different transients, both following pulses of magnitude VP but with quiescent biases differing by ΔVC, so that the final value of the capacitance transient with reverse bias VR+ΔVC is the same as the initial value of the transient when the reverse bias is only VR. The ratio of deep levels (causing the transient) to shallower levels is then given by ΔVC/VP

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Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 1 )