Cart (Loading....) | Create Account
Close category search window

Domain wall pinning and hysteresis losses in amorphous CoNbZr films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rouabhi, M. ; Lab. de Magnetisme et Materiaux Magnetiques, CNRS, Meudon, France ; Guyot, M. ; Cagan, V. ; Krishnan, R.

In a series of CoNbZr amorphous films prepared by RF sputtering, with thickness t ranging from 86 to 480 nm, the authors show that the domain wall (DW) motion is the dominant magnetization mechanism in the irreversible processes when the magnetic field is applied along the in-plane easy axis. A simple model, assuming a DW pinning at the film surfaces, explains the existence of a critical unpinning field (as well as hysteresis losses) inversely proportional to the film thickness. Frequency effects in loop parameters are reported up to 100 kHz

Published in:

Magnetics, IEEE Transactions on  (Volume:29 ,  Issue: 6 )

Date of Publication:

Nov 1993

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.