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Partially grooved domain stabilization structures for vertical Bloch line memory

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3 Author(s)
Katti, R.R. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Dooley, J.A. ; Meng, A.

Bias field stability ranges were measured and numerically simulated for magnetic domains in garnets stabilized by partially grooved rectangular and ring grooves. Simulation results agree favorably with experimental results when the finite slope effects of the groove walls are included. As bias fields increase, destabilization in rectangular and ring domains occurs by runout and midstripe domain buckling, respectively. While ring domains are stable at lower bias fields than rectangular domains, bias field stability ranges are approximately equal. For the same partial grooving depth, rectangular domains are preferred because they offer higher storage density potential for vertical Bloch line storage, as long as the bit propagation margins at the stripe ends are sufficient

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Magnetics, IEEE Transactions on  (Volume:29 ,  Issue: 6 )