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Realisation of doped-channel MISFETs with high breakdown voltage in AlGaAs/InGaAs based material system

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4 Author(s)
Kaviani, K. ; Univ. of Southern California, Los Angeles, CA ; Madhukar, A. ; Brown, J.J. ; Larson, L.E.

The authors report the realisation of a doped-channel MISFET with high drain-source and gate-drain breakdown voltages of 41 and -37 V, respectively, and a record low output conductance of 150 μS/mm. These characteristics are achieved through the use of n-type highly doped In 0.26Ga0.74As as the channel material and a short period (AlAs)3(GaAs)4 superlattice as the gate insulator and the lower barrier grown on GaAs (100) substrates

Published in:

Electronics Letters  (Volume:30 ,  Issue: 8 )

Date of Publication:

14 Apr 1994

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