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Submicrometre gate length scaling of inversion channel heterojunction field effect transistor

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11 Author(s)
P. A. Kiely ; AT&T Bell Labs., Holmdel, NJ ; T. A. Vang ; M. Micovic ; A. Lepore
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The scaling to 0.5 μm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm=205 mS/mm and VTH=-0.34 V have been obtained for 0.5×100 μm2 devices. For shorter gate lengths, threshold shifts are sizeable so that in order to scale further, modifications to the growth and processing are required

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Electronics Letters  (Volume:30 ,  Issue: 6 )