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Raman spectroscopy and the characterization of buried semiconductor layers

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2 Author(s)
Tsang, James C. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Iyer, S.S.

The ability of Raman scattering to characterize a subnanometer buried layer of Ge in Si (100) with respect to composition, strain, homogeneity, structure, and thickness is described. The inability of Raman scattering to provide quantitative information on the thickness of a buried thin layer is discussed.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 5 )

Date of Publication:

May 1989

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