Referenced Items are not available for this document.
A Raman study of heavily Si- and Be-doped GaAs grown by molecular beam epitaxy is discussed. Both impurities give rise to local vibrational modes (LVM) which can be observed in Raman spectroscopy for impurity concentrations exceeding ~2×1018 cm-3. Compared to absorption spectroscopy, which is the `classical' technique to study LVMs in relatively thick (≥1 μm) layers, Raman spectroscopy permits analysis of the incorporation of both dopants in thin (≥10 nm) as-grown GaAs layers.
Published in:
Quantum Electronics, IEEE Journal of
(Volume:25
,
Issue:
5
)
Date of Publication: May 1989
- Page(s):
- 993 - 996
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 3433168
- Digital Object Identifier :
- 10.1109/3.27990
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1989
- Sponsored by :
- IEEE Photonics Society
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