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A Raman study of heavily Si- and Be-doped GaAs grown by molecular beam epitaxy is discussed. Both impurities give rise to local vibrational modes (LVM) which can be observed in Raman spectroscopy for impurity concentrations exceeding ~2×1018 cm-3. Compared to absorption spectroscopy, which is the `classical' technique to study LVMs in relatively thick (≥1 μm) layers, Raman spectroscopy permits analysis of the incorporation of both dopants in thin (≥10 nm) as-grown GaAs layers.
Date of Publication: May 1989