By Topic

Raman microprobe analysis of strain induced by patterned dielectric films of GaAlAs structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Raman spectra from GaAlAs layers with Si3N4 stripes obtained with a microprobe are discussed. The spatial resolution of these Raman spectra was smaller than the scale of the microfabricated features. A significant stress-induced shift in the GaAlAs longitudinal optic (LO) phonon frequency has been observed under 3.5 μm wide Si3N4 stripes. Rapid thermal annealing reduced the LO phonon frequency shift, and thus the stress, under the Si3N4 stripe. A corresponding dramatic change in optical waveguide behavior under the stripe was observed.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 5 )