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Characterization of semiconductor materials by Raman microprobe

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2 Author(s)
Nakashima, S. ; Dept. of Appl. Phys., Osaka Univ., Japan ; Hangyo, M.

The physical background of semiconductor characterization by Raman scattering and some of the technical problems in the Raman microprobe are described. Several significant applications for semiconductors in bulk, thin film, and device configurations are presented.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 5 )

Date of Publication:

May 1989

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