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Continuous operation of high-power (200 mW) strained-layer Ga1-xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87⩽λ⩽0.95 μm

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4 Author(s)
Stutius, W. ; Microelectron. Lab., Polaroid Corp., Cambridge, MA ; Gavrilovic, P. ; Williams, J.E. ; Meehan, K.

Separate confinement single-quantum-well lasers with 100-120 Å-thick strained Ga1-xInxAs/GaAs active layers have been grown on (100) GaAs substrates by metalorganic chemical vapour deposition. Ten-stripe proton-implanted arrays with 90 μm-wide aperture and 250 μm cavity length emit 200 mW CW optical power at wavelengths 0.87⩽λ⩽0.95 μm. Lifetest data on an uncoated device emitting 90 mW/facet at 50°C and λ=0.95 μm suggest a mean-time-to-failure in excess of 2500 h at room temperature. The performance of lasers with strained Ga1-xInxAs quantum wells is comparable to that of unstrained AlxGa1-xAs/GaAs quantum-well lasers without facet coating

Published in:

Electronics Letters  (Volume:24 ,  Issue: 24 )