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Continuous operation of high-power (200 mW) strained-layer Ga/sub 1-x/In/sub x/As/GaAs quantum-well lasers with emission wavelengths 0.87

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5 Author(s)
Stutius, W. ; Microelectron. Lab., Polaroid Corp., Cambridge, MA, USA ; Gavrilovic, P. ; Williams, J.E. ; Meehan, K.
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Separate confinement single-quantum-well lasers with 100-120 AA-thick strained Ga/sub 1-x/In/sub x/As/GaAs active layers have been grown on

Published in:

Electronics Letters  (Volume:24 ,  Issue: 24 )