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A new linear sweep technique to measure generation lifetimes in thin-film SOI MOSFET's

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3 Author(s)
S. Venkatesan ; Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA ; R. F. Pierret ; G. W. Neudeck

A new linear sweep technique to measure generation lifetimes (τg) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted SOI films. The measurement technique is experimentally verified by applying the algorithm to fully depleted SIMOX P-channel MOSFET's where observed lifetimes ranged from 0.3 μs to 2.4 μs

Published in:

IEEE Transactions on Electron Devices  (Volume:41 ,  Issue: 4 )