Referenced Items are not available for this document.
For deep submicron MOSFET's short-channel effects dominate the transistor characteristics. We present here a new analytical MOSFET model for circuit simulation which includes these effects. The model is based on the charge-sheet approximation including the drift and the diffusion contributions. Additionally the model includes the contribution of the lateral electric field explicitly. Therefore it enables the calculation of the transistor characteristics, i.e., the drain current and the channel conductance, for all channel lengths down to a quarter-micron with one parameter set with high accuracy. Due to the physically consistent treatment of the model, a drastic reduction in the number of model parameters has been realized
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:13
,
Issue:
5
)
Date of Publication: May 1994
- Page(s):
- 610 - 615
- ISSN :
- 0278-0070
- INSPEC Accession Number:
- 4673891
- Digital Object Identifier :
- 10.1109/43.277634
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1994
- Sponsored by :
- IEEE Council on Electronic Design Automation
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