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Simulation and modeling of p-n-p-n optical switches

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1 Author(s)
Fardi, H.Z. ; Dept. of Electr. Eng., Colorado Univ., Denver, CO, USA

A one-dimensional semiconductor device simulation program (FARDEV) with current boundary conditions is developed to study the steady-state and the transient characteristics of heterostructure four-layer p-n-p-n optical switches. Avalanche effect, radiative recombination, and band-gap discontinuities are included in the model. To demonstrate the use of the simulator, the modeling results are studied for both InP-In 0.53Ga0.47As and Al0.3Ga0.7As-GaAs devices, and compared with experimental results in the latter case. The effects of optical generation and carrier lifetime on electrical characteristics of p-n-p-n switches are investigated. Simulation and experiment agree on holding current and voltage and on high-current on-state characteristics, while the limitation and simplification of the numerical model leads to discrepancy in the low-current off-state. The simulator is shown to be useful in evaluating the effects of device geometry, material parameters, avalanche mechanism, heterostructure spacing, and light generation on key switching parameters of four-layer p-n-p-n switches

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 5 )

Date of Publication:

May 1993

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