Cart (Loading....) | Create Account
Close category search window
 

Effect of X-ray radiation on MOSFET's (SIMOX) LF excess noise

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Berland, V. ; Bordeaux 1 Univ., Talence, France ; Touboul, A. ; Dupont-Nivet, E. ; Leray, J.L.

The behavior of hardened n-MOS and p-MOS transistors (silicon on insulator (SOI)-SIMOX technology) was investigated. These elementary components have been irradiated by X-ray radiation after an electrical characterization. In addition to such electrical parameters as the threshold voltage, the transconductance, and the leakage drain current, it is interesting to observe the channel noise level shift before and after irradiation at different doses. The particular interest of this analysis is found in the behavior of SOI-SIMOX technology transistors. This approach based on LF excess noise measurements is a new way to evaluate and understand the radiation-induced mechanisms. The major effects of ionizing radiation on MOS transistors are identified as the increase of the fixed oxide charge and of the interface state density, both mechanisms stemming from ionizing effects in the thin gate oxide. These densities control the channel current fluctuations and then the channel noise current

Published in:

Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 3 )

Date of Publication:

Jun 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.