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A circuit design for the improvement of radiation hardness in CMOS digital circuits

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4 Author(s)
Chen, C.-C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Liu, S.-C. ; Cheng-Cheng Hsiao ; Hwu, Jenn-Gwo

A design consideration for digital CMOS circuits that are almost insensitive to radiation is proposed. By adding three n-MOSFETs to the conventional digital CMOS circuits, good radiation-hard behavior is observed in the inverter, NOR, and NAND gates under SPICE simulation. Detailed circuit design consideration and the simulation results are given

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Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 2 )