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Physics-based expressions for the nonlinear capacitances of the MESFET equivalent circuit

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2 Author(s)
D'Agostino, S. ; Dept. of Electronic Eng., Rome Univ., Italy ; Betti-Berutto, A.

In this paper, we present a simple physical determination of the nonlinear capacitance parameters (Cgdo and Cgso) of the MESFET equivalent circuit. Semiempirical models such as the Curtice and Statz-Pucel models, in conjunction with these physics-based expressions, are a fast tool for CAD of microwave integrated circuit simulation, saving the designer the tedious and sometimes difficult process of parameter extraction and providing a better estimate of device statistics. Using the equations obtained in this work, a submicron gate length MESFET has been simulated and theoretical results are in good agreement with the experimental measurements

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:42 ,  Issue: 3 )