Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K

Minority-carrier electron lifetime, mobility and diffusion length in heavily doped p-type Si were measured at 296 and 77 K. It was found that a 296 K mu /sub n/ (pSi) approximately= mu /sub n/ (nSi) for N/sub AA/3*10/sup 18/ cm/sup -3/, in contrast to the opposite dependence for mu /sub n/ (nSi) in n/sup +/ Si.<>