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Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K

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2 Author(s)
Leu, I.-Y. ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; Neugroschel, A.

Minority-carrier electron lifetime, mobility and diffusion length in heavily doped p-type Si were measured at 296 and 77 K. It was found that a 296 K μn (pSi)≈μn (nSi) for N AA≲5×1018 cm-3, while μn (pSi)/μn (nSi)≈1 to 2.7 for higher dopings. The results also show that for NAA≲3×1019 cm-3, D (pSi) at 77 K is smaller than that at 296 K, while for higher dopings Dn (pSi) is larger at 77 K than at 296 K. μn (pSi) at 77 K increases with the increasing doping above NAA>3×1018 cm-3, in contrast to the opposite dependence for μn (nSi) in n+ Si

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 10 )

Date of Publication:

Oct 1993

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