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First demonstration of 60 GHz-ft GaInP/GaAs HBT IC technology with 28 ps ECL gate delay

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5 Author(s)
Prasad, S.J. ; Tektronix Inc., Beaverton, OR, USA ; Vetanen, B. ; Haynes, C. ; Beers, I.
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A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an fT and fmax of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained from ring oscillator measurements. A divide-by-eight prescaler circuit clocks at 12.5 GHz.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 3 )