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Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

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5 Author(s)
Sung, K.T. ; Michigan Univ., Ann Arbor, MI, USA ; Li, W.Q. ; Li, S.H. ; Pang, S.W.
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A 5 nm-thick SiO2 gate was grown on an Si (p+)/Si0.8Ge0.2 modulation-doped heterostructure at 26 degrees C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field >12 MV/cm and fixed charge density approximately 3*1016 cm-2. Leakage current as low as 1 mu A was obtained with the gate biased at 4 V. The MISFET with 0.25*25 mu m2 gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 3 )