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Higher power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE

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4 Author(s)
Sin, Y.K. ; Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Horikawa, H. ; Nakajima, M. ; Kamijoh, T.

The first demonstration of distributed feedback InGaAs-GaAs buried heterostructure strained quantum well lasers with In0.49Ga0.51P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p+-GaAs substrate show a low laser threshold of 3.2 mA and a high output power of 45 mW both measured CW at RT.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 3 )