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A high gain low noise 110 GHz monolithic two-stage amplifier

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9 Author(s)
Wang, H. ; TRW, Redondo Beach, CA, USA ; Tan, K.L. ; Ton, T.N. ; Dow, G.S.
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A high-gain low-noise 110-GHz monolithic two-stage amplifier using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT (high electron mobility transistor) technology is presented. This amplifier demonstrates a small signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6 dB associated gain was obtained at 113 GHz. The superior results of this monolithic low-noise amplifier allow system applications at 110 GHz, such as radiometers and low-noise receivers.<>

Published in:

Microwave Symposium Digest, 1993., IEEE MTT-S International

Date of Conference:

14-18 June 1993

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