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20 GHz high power high efficiency HEMT module

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8 Author(s)
Chen, C.H. ; TRW Inc., Redondo Beach, CA, USA ; Yen, H.C. ; Tan, K. ; Callejo, L.
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The development of a high-gain, high-power, high-efficiency K-band MIC (microwave integrated circuit) power module using four 1.6-mm pseudomorphic InGaAs HEMT (high electron mobility transistor) devices is reported. Power output of 3.2 W with 10 dB gain and 35% power-added efficiency at 3-dB compression was obtained at 20 GHz. The 1-dB bandwidth is 1.7 GHz. The greatly improved power gain and efficiency offer several design advantages in terms of higher SSPA (solid-state power amplifier) efficiency, fewer stages and modules required, and the attendant improved reliability for onboard application at 20 GHz.<>

Published in:

Microwave Symposium Digest, 1993., IEEE MTT-S International

Date of Conference:

14-18 June 1993

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