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Broadband high-efficiency HBT MMIC power amplifier fabricated with re-aligned process

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5 Author(s)
J. J. Komiak ; General Electric Co., Syracuse, NY, USA ; L. W. Yang ; R. S. Brozovich ; S. T. Fu
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The design and performance of a 6-10-GHz heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier that produces 1.25 to 2.15 W at 30 to 46% power-added efficiency with 9.5 to 12.5 dB of power gain are described. With only 500 mu m/sup 2/ of output periphery, record MMIC HPA (high-power amplifier) power densities of 2.5 to 4.3 mW/ mu m/sup 2/ have been demonstrated.<>

Published in:

Microwave Symposium Digest, 1993., IEEE MTT-S International

Date of Conference:

14-18 June 1993