High temperature operation of circular-grating surface-emitting DBR lasers fabricated on an InGaAs/GaAs structure

We demonstrate high temperature operation of circular-grating surface-emitting distributed Bragg reflector lasers. The structure is a strained InGaAs/GaAs double quantum well. Circular gratings are defined by electron beam lithography. No epitaxial regrowth is used. A surface emission power of over 40 mW under pulsed operation at temperatures of up to 80/spl deg/C is obtained without saturation. A fixed single mode operation was achieved over a temperature range of 60 degrees.<
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